SMTPB68 [BL Galaxy Electrical]
TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V; 电信保护击穿电压: 62 --- 270 V型号: | SMTPB68 |
厂家: | BL Galaxy Electrical |
描述: | TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V |
文件: | 总4页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
SMTPB---SERIES
BL
BREAKDOWN VOLTAGE: 62 --- 270 V
TELECOMMUNICATION PROTECTION
POWER DISSIPATION: 5.0 W
SMB
FEATURES
4.5± 0.15
Bidirectional crowbar protection
Voltage range:from 62V to 270V.
Holding current:IH=150mAmin
5.3± 0.2
Repetitive peak pulse
current:IPP=100A,10/1000
s.
0.2± 0.05
1.25± 0.2
DESCRIPTION
Dimensions in millimeters
The SMTPB series are designed for protecting sensitive
telecommunication equipment against lightning and
transient voltages induced by AC power lines.
SCHEMATIC DIAGRAM
The devices provide bidirectional protection by crowbar
action.Their characteristic response to transien over-
voltages makes them particularly suited to protect volatge
sensitive telecommunication equipment.
Necessary
Peak surge
voltage
(V)
Voltage
Current
waveform
s)
Admissible
Ipp
Complies with the
waveform
resistor
following standards:
s)
(
(A)
(
)
(
CCITTK20
4000
4000
4000
10/700
10/700
1.2/50
5/310
5/310
1/20
100
100
100
--
--
--
VDE0433
VDE0878
IeveI 4
IeveI 4
10/700
1.2/50
5/310
8/20
100
100
--
--
IEC-1000-4-5
1500
800
10/160
10/560
10/160
10/560
200
100
--
--
FCC Part 68,lightning surge type A
FCC Part 68,lightning surge type B
100
5/320
5/320
25
--
2/10
10/1000
2500
1000
2/10
10/1000
500
100
--
--
BELLCORE TR-NWT-001089 First level
BELLCORE TR-NWT-001089 Second
level
500
2/10
2/10
500
--
CNET131-24
4000
0.5/700
0.8/310
100
--
www.galaxycn.com
Document Number 0286006
BLGALAXY ELECTRICAL
1.
SMTPB---SERIES
GALAXY ELECTRICAL
BL
ABSOLUTE MAXIMUM RATINGS (TA=25
Symbol
)
Parameter
Value
Unit
P
Power dissipation on infinite heatsink
Tamb=50
10/1000
5.0
W
s
100
150
500
A
Ipp
Peak pulse current
8/20
s
2/10
s
ITSM
I2t
Non repetitive surge peak on-state current
I2t vallue for fusing
tp=20ms
tp=20ms
VRM
50
25
5
A
A2s
dV/dt
Critical rate of rise of off-state voltage
kV/µS
Tstg
Storage temperature range
-55to+150
Tj
150
Maximum junction temperature
TL
230
Maximum lead temperature for soldering during 10s at 5mm form case
THERMAL RESISTANCES
Symbol
Parameter
Value
Unlt
/W
Rth(j-l)
20
Junction to leads (Llead=10mm)
Junction to ambient on printed circuit (Llead=10mm)
Rth(j-a)
/W
75
Type
VR @ IR
min.
VBO @ IBO
max.
IRM @ VRM
I
C
miHn.
max.
max.
note1
note2
note3
note4
A
V
V
62
68
mA
50
50
50
50
50
50
50
50
50
50
V
mA
mA
PF
SMTPB62
SMTPB68
2
56
61
90
108
117
162
180
198
216
243
82
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
300
300
200
200
200
200
200
200
200
200
2
2
2
2
2
2
2
2
2
90
100
120
130
180
200
220
240
270
133
160
173
240
267
293
320
360
SMTPB100
SMTPB120
SMTPB130
SMTPB180
SMTPB200
SMTPB220
SMTPB240
SMTPB270
ELECTRICAL CHARACTERISTICS (TA=25
)
Symbol
VRM
IRM
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous reverse voltage
Breakdown voltage
Breakover voltage
I
I
PP
I
I
I
I
BO
H
VR
R
VBR
VBO
IH
RM
V
V
BR VBO
V
RM
Holding current
IBO
Breakover current
IPP
C
Peak pulse current
Capacitance
www.galaxycn.com
Note1:IR measured at VR guarantees VBRmin≥VR
Note3: See test circuit2.
Note 2:Measured at 50Hz(1 cycle)-See test circuit 1.
Note4: VR=1V,F=1MHz,refer to fig.3 for C versus VR.
BLGALAXY ELECTRICAL
2.
Document Number 0286006
RATINGS AND CHARACTERISTIC CURVES
SMTPB---SERIES
TEST CIRCUIT 1 FOR IBO AND VBO PARAMETERS:
tp=20ms
Auto
Transformer
220V/2A
R1
140
static
relay.
R2
240
k
V
BO
D.U.T
measure
Vout
I
BO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = SwitchK is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO 200 Volt
- VOUT = 480 VRMS, R2 = 240Ω.
TEST CIRCUIT 2 FOR IH PARAMETER:
R
Vp
D.U.T.
VBAT=-48V
Surge generator
This is a GO-NO GOTest which allows to confirm the holding current (IH) level in a functionaltest circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge current : Ipp = 10A , 10/1000µ s.
3) The D.U.T will come back off-state within 50ms max.
www.galaxycn.com
BLGALAXY ELECTRICAL
3.
Document Number 0286006
RATINGS AND CHARACTERISTIC CURVES
SMTPB---SERIES
FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE
VVVVVV CURRENT VERSUS OVERLOAD DURATION
FIG.2 -- RELATIVE VARIATION OF HOLDING
DDDD DCURRENT VERSUS JUNCTION
VV
(TJ INItIAL=25°C).
SSSS CTEMPERATURE.
IH[TJ]/IH[TJ=25℃]
ITSM(A)
2.0
1.8
1.6
F=50Hz
60
1.4
1.2
1.0
0.8
0.6
0.4
30
TJ(℃)
0.2
t(s)
0.0
-40
-20
0
20
40
60
80
100
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
FIG.4 -- ON-STATE CURRENT VERSUS ON-STATE YY
YYYVOLTAGE
FFFFFIG.3 -- RELATIVE VARIATION OF JUNCTION
VVVVVVVV CAPACITANCE VERSUS REVERSE
BBBBBBBB APPLIED VOLTAGE
I (A)
T
C[VR]/C[VR=1V]
1.0
100
F=1MHZ
T =25℃
J
0.5
10
0.2
VR(V)
V (V)
T
1
0.1
1
10
100
300
0
1
2
3
4
5
6
7
8
9
10
FIG.5 -- TRANSIENT THERMAL IMPEDANCE JUNCTION TO AMBIENT VERSUS PULSE DURATION
ZTH(J-a)( /W)
100
10
1
tp(s)
0.1
0.01
0.1
1.0
10
100
1000
5000
www.galaxycn.com
4.
BLGALAXY ELECTRICAL
Document Number 0286006
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